Broadband performance assessment of a microwave power transistor employing the real frequency technique

Generation of proper source/load-pull impedances for a selected active device is essential to design an RF power amplifier optimum gain and added efficiency. As they are obtained, these may not be realizable network functions over the desired frequency band yield input output matching networks amplifier. Therefore, in this paper, first, we introduce new method test if given impedance realizable. Then, novel “real line-segment technique” based numerical procedure introduced assess gain-bandwidth limitations source load impedances, which turn results ultimate power-intake power-delivery capacity During performance assessments process, robust tool called “virtual optimization” presented. Finally, definition “power product” measure quality device. Examples presented realizability source-/load-pull data 45 W-GaN transistor, namely, “Wolfspeed CG2H40045” 0.8–3.8 GHz bandwidth.